r 201409c 1/8 n ??? n- channel mosfet JCS20N60FH order codes ? marking ? package halogen free ? packaging device weight JCS20N60FH-o-f-n-b JCS20N60FH to-220mf no tube 2.20 g(typ) JCS20N60FH-r-f-n-b JCS20N60FH to-220mf yes tube 2.20 g(typ) ? main characteristics id 20 a vdss 600 v rdson@vgs=10v 0.39 qg 50nc ? z ??? z z ups ? applications z high efficiency switch mode power supplies z electronic lamp ballasts based on half bridge z ups ? z ? z c rss ( ? 85pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 85pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message ? package
r JCS20N60FH 201409c 2/8 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit ???? drain-source voltage v dss 600 v 20.0* a ? drain current -continuous i d t=25 t=100 12.5* a ?? 1 drain current -pulse note 1 i dm 6 0* a ??? gate-source voltage v gss 30 v ?? 2 single pulsed avalanche energy note 2 e as 450 mj ?? 1 avalanche current note 1 i ar 20.0 a ??? 1 repetitive avalanche current note 1 e ar 20.7 mj ????? 3 peak diode recovery dv/dt note 3 dv/dt 50 v/ns 55.0 w ? power dissipation p d t c =25 -derate above 25 0.31 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r JCS20N60FH 201409c 3/8 electrical characteristic ? parameter symbol tests conditions min typ max units ? off ?characteristics ??? drain-source voltage bv dss i d =250 a, v gs =0v 600 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.5 - v/ v ds =600v, v gs =0v, t c =25 - - 1 a ???? zero gate voltage drain current i dss v ds =480v, t c =125 - - 10 a ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3.0 - 5.0 v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =10.0a - 0.35 0.39 ? forward transconductance g fs v ds = 40v , i d =10.0a note 4 - 18 - s ? dynamic characteristics input capacitance c iss - 2310 2920 pf output capacitance c oss - 1270 1660 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 85 120 pf
r JCS20N60FH 201409c 4/8 electrical characteristics thermal characteristic ? value ? parameter symbol JCS20N60FH unit ??? thermal resistance, junction to case rth(j-c) 3.20 /w ? thermal resistance, junction to ambient rth(j-a) 62.5 /w ? parameter symbol tests conditions min typ max units switching ?characteristics ?? turn-on delay time t d (on) - 60 128 ns ? turn-on rise time t r - 130 270 ns ?? turn-off delay time t d (off) - 220 445 ns ?? turn-off fall time t f v dd =250v,i d =20a,r g =25 ? note 4 5 - 70 145 ns ? total gate charge q g - 50 80 nc ?? gate-source charge q gs - 15.0 - nc ?? gate-drain charge q gd v ds =480v , i d =20a v gs =10v note 4 5 - 23 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain-source diode forward current i s - - 20 a maximum pulsed drain-source diode forward current i sm - - 80 a maximum continuous drain-source diode forward current v sd v gs =0v, i s =20a - 1.4 v ?? reverse recovery time t rr 460 ns ? reverse recovery charge q rr v gs =0v, i s =20a di f /dt=100a/ s (note 4) 5.1 c ? 1 ? 2 l=5.0mh, i as =20a, v dd =50v, r g =25 ? , ? t j =25 3 i sd ? 20a,di/dt ? 200a/ s, vdd ? bv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=5.0mh, i as =20a, v dd =50v, r g =25 ? ,starting t j =25 3 i sd ? 20a,di/dt ? 200a/ s, vdd ? bv dss , starting t j =25 4 pulse test pulse width ? 300 s, duty cycle ? 2 5 essentially independent of operating temperature
r JCS20N60FH 201112b 5/8 electrical characteristics (curves) on-region characteristics transfer characteristics on-resistance variation vs drain current and gate voltage body diode forward voltage v ariation vs. source current and tem p erature capacitance characteristics capacitance characteristics 10 0 10 1 10 0 10 1 10 2 *note: 1. 250 s pulse test 2. t j =25 vgs top 15.0v 10.0v 9.0v 8.0v 7.0v 6.5v 6.0v bottom 5.5v i d drain current[a] v ds drain-source voltage[v] 10 0 10 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25 150 v sd source-drain voltage[v] i dr reverse drain current[a] note: 1.v gs =0v 2.250 s pulse test 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 45 50 *note:i d =20a v ds =400v v ds =250v v ds =100v q g toltal gate charge [nc] v gs gate source voltage[v] 0246810121416182022 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 note ? t j =25 v gs =10v v gs =20v r ds (on) [ ? ] i d [a] 24681012 10 0 10 1 10 2 -55 25 i d drain current[a] v gs gate-source voltage[v] 150 note: 1.vds=40v 2.250 s pulse test 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 coss ciss crss *note: 1. v gs =0v 2. f=1 mhz c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds drain-source voltage [v]
r jcs20n60 fh 201409c 6/8 electrical characteristics (curves) breakdown voltage variation vs. temperature on-resistance variation vs. tem p erature maximum safe operating area maximum drain current vs. case tem p erature transient thermal response curve - 25 0 25 50 75 100 0.5 0. 7 0.9 1. 1 1. 3 notes 1. v gs =0v 2. i d =250 a bv ds (normalized) t j [] 25 50 75 100 125 150 0 5 10 15 20 25 i d drain current [a] t c case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 t 2 t 1 0.5 0.2 0.1 0.05 0.02 z jc (t) thermal response t 1 square wave pulse duration [sec] single pulse 0.01 notes: 1 z jc (t)=0.46 /w max 2 duty factor, d=t 1 /t 2 3 t jm -t c =p dm * z jc (t) p dm - 50 -25 0 25 50 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =10.0a r d(on) (normalized) t j [ ] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c =25 2 t j =150 3 single pulse 1ms 100 s 10ms dc i d drain current [a] v ds drain-source voltage [v]
r jcs20n60h 201 409c 7/8 ? package mechanical data to-220mf unit mm
r JCS20N60FH 201409c 8/8 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? htu www.hwdz.com.cn uth ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site htu www.hwdz.com.cn uth market department add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533
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